STU6N60M2

MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2

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MOSFETs N-CH 600V 1.06Ohm 4.5A MDmesh M2
Lead Time: 112 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	650 V
Vgs - Gate-Source Voltage	25 V
Id - Continuous Drain Current	4.5 A
Configuration	Single
Pd - Power Dissipation	60 W
Technology	Si
Rds On - Drain-Source Resistance	1.2 Ohms
Packaging	Tube
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Mounting Style	Through Hole
Tradename	MDmesh
Qg - Gate Charge	8 nC
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Vds - Drain-Source Breakdown Voltage	650 V
Vgs - Gate-Source Voltage	25 V
Id - Continuous Drain Current	4.5 A
Configuration	Single
Pd - Power Dissipation	60 W
Technology	Si
Rds On - Drain-Source Resistance	1.2 Ohms
Packaging	Tube
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Mounting Style	Through Hole
Tradename	MDmesh
Qg - Gate Charge	8 nC
Transistor Polarity	N-Channel
Number of Channels	1 Channel