MOSFETs N-Ch, 620V-2.2ohms 2.7A
Lead Time: 91 Days
Products specifications
Pd - Power Dissipation | 45 W |
Qg - Gate Charge | 13 nC |
Tradename | MDmesh |
Packaging | Tube |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 30 V |
Configuration | Single |
Vds - Drain-Source Breakdown Voltage | 620 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Technology | Si |
Rds On - Drain-Source Resistance | 2.5 Ohms |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Id - Continuous Drain Current | 2.7 A |