MOSFET N-Ch 620V 2.5 Ohm 2.5A SuperMESH 3
Products specifications
Technology | Si |
Id - Continuous Drain Current | 2.5 A |
Vds - Drain-Source Breakdown Voltage | 620 V |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 3 Ohms |
Pd - Power Dissipation | 45 W |
Configuration | Single |
Tradename | SuperMESH |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Packaging | Tube |
Vgs - Gate-Source Voltage | 30 V |
Qg - Gate Charge | 17 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |