STU2LN60K3

MOSFET N-Ch 600 V 4 Ohm 2 A SuperMESH3

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MOSFETs N-Ch 600 V 4 Ohm 2 A SuperMESH3
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Products specifications

Number of Channels	1 Channel
Technology	Si
Qg - Gate Charge	12 nC
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	2 A
Pd - Power Dissipation	45 W
Vgs - Gate-Source Voltage	30 V
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	3.75 V
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	4 Ohms
Packaging	Tube
Tradename	SuperMESH
Mounting Style	Through Hole

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Products specifications

Number of Channels	1 Channel
Technology	Si
Qg - Gate Charge	12 nC
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	2 A
Pd - Power Dissipation	45 W
Vgs - Gate-Source Voltage	30 V
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	3.75 V
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	4 Ohms
Packaging	Tube
Tradename	SuperMESH
Mounting Style	Through Hole