STU1HN60K3

MOSFET N-Ch 6.4 Ohm 1.2A SuperMesh3 IPAK

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MOSFETs N-Ch 6.4 Ohm 1.2A SuperMesh3 IPAK
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Products specifications

Vgs - Gate-Source Voltage	30 V
Qg - Gate Charge	9.5 nC
Id - Continuous Drain Current	1.2 A
Tradename	SuperMESH
Vgs th - Gate-Source Threshold Voltage	3.75 V
Rds On - Drain-Source Resistance	6.7 Ohms
Number of Channels	1 Channel
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Technology	Si
Pd - Power Dissipation	27 W
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	600 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Configuration	Single

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Products specifications

Vgs - Gate-Source Voltage	30 V
Qg - Gate Charge	9.5 nC
Id - Continuous Drain Current	1.2 A
Tradename	SuperMESH
Vgs th - Gate-Source Threshold Voltage	3.75 V
Rds On - Drain-Source Resistance	6.7 Ohms
Number of Channels	1 Channel
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Technology	Si
Pd - Power Dissipation	27 W
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	600 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Configuration	Single