STU16N65M2

MOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package

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MOSFETs N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in IPAK package
Lead Time: 112 Days

Products specifications

Vgs - Gate-Source Voltage	25 V
Packaging	Tube
Pd - Power Dissipation	110 W
Transistor Polarity	N-Channel
Qg - Gate Charge	19.5 nC
Rds On - Drain-Source Resistance	360 mOhms
Number of Channels	1 Channel
Configuration	Single
Technology	Si
Mounting Style	Through Hole
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	11 A
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	2 V

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Products specifications

Vgs - Gate-Source Voltage	25 V
Packaging	Tube
Pd - Power Dissipation	110 W
Transistor Polarity	N-Channel
Qg - Gate Charge	19.5 nC
Rds On - Drain-Source Resistance	360 mOhms
Number of Channels	1 Channel
Configuration	Single
Technology	Si
Mounting Style	Through Hole
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	11 A
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	2 V