STU10N60M2

MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2

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MOSFETs N-CH 600V 0.56Ohm 7.5A MDmesh M2
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Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Single
Rds On - Drain-Source Resistance	560 mOhms
Maximum Operating Temperature	+ 150 C
Tradename	MDmesh
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Pd - Power Dissipation	85 W
Technology	Si
Vgs - Gate-Source Voltage	25 V
Packaging	Tube
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	13.5 nC
Vgs th - Gate-Source Threshold Voltage	3 V
Id - Continuous Drain Current	7.5 A

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Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Single
Rds On - Drain-Source Resistance	560 mOhms
Maximum Operating Temperature	+ 150 C
Tradename	MDmesh
Transistor Polarity	N-Channel
Mounting Style	Through Hole
Pd - Power Dissipation	85 W
Technology	Si
Vgs - Gate-Source Voltage	25 V
Packaging	Tube
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	13.5 nC
Vgs th - Gate-Source Threshold Voltage	3 V
Id - Continuous Drain Current	7.5 A