MOSFETs P-Channel 30 V, 0.048 Ohm typ 4 A STripFET H6 Power MOSFET
Lead Time: 182 Days
Products specifications
Id - Continuous Drain Current | 4 A |
Technology | Si |
Tradename | STripFET |
Rds On - Drain-Source Resistance | 56 mOhms |
Channel Mode | Enhancement |
Transistor Polarity | P-Channel |
Configuration | Single |
Packaging | Cut Tape, MouseReel, Reel |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Pd - Power Dissipation | 1.6 W |
Qg - Gate Charge | 6 nC |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 10 V |