STS8DN6LF6AG

MOSFET Automotive-grade dual N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package

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MOSFETs Automotive-grade dual N-channel 60 V, 21 mOhm typ 8 A STripFET F6 Power MOSFET
Lead Time: 182 Days

Products specifications

Channel Mode	Enhancement
Pd - Power Dissipation	3.2 W
Configuration	Dual
Maximum Operating Temperature	+ 175 C
Qualification	AEC-Q101
Id - Continuous Drain Current	8 A
Technology	Si
Tradename	STripFET
Transistor Polarity	N-Channel
Number of Channels	2 Channel
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	60 V
Qg - Gate Charge	27 nC, 27 nC
Vgs th - Gate-Source Threshold Voltage	1 V
Vgs - Gate-Source Voltage	20 V
Rds On - Drain-Source Resistance	21 mOhms, 21 mOhms

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Products specifications

Channel Mode	Enhancement
Pd - Power Dissipation	3.2 W
Configuration	Dual
Maximum Operating Temperature	+ 175 C
Qualification	AEC-Q101
Id - Continuous Drain Current	8 A
Technology	Si
Tradename	STripFET
Transistor Polarity	N-Channel
Number of Channels	2 Channel
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	60 V
Qg - Gate Charge	27 nC, 27 nC
Vgs th - Gate-Source Threshold Voltage	1 V
Vgs - Gate-Source Voltage	20 V
Rds On - Drain-Source Resistance	21 mOhms, 21 mOhms