MOSFET N/P-Ch 30V 8/5 Amp
Products specifications
Number of Channels | 2 Channel |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Id - Continuous Drain Current | 5.4 A, 8 A |
Vds - Drain-Source Breakdown Voltage | 30 V |
Transistor Polarity | N-Channel, P-Channel |
Qg - Gate Charge | 7 nC, 12.5 nC |
Packaging | Cut Tape, MouseReel, Reel |
Vgs - Gate-Source Voltage | 10 V |
Technology | Si |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 1.6 W, 2 W |
Configuration | Dual |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 22 mOhms, 55 mOhms |