STS5P3LLH6

MOSFET P-Channel 30 V, 0.048 Ohm typ., 5 A STripFET H6 Power MOSFET in SO-8 package

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R 25.18

R 17.26

R 11.93

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MOSFETs P-Channel 30 V, 0.048 Ohm typ 5 A STripFET H6 Power MOSFET in SO-8 package
Lead Time: 182 Days

Products specifications

Rds On - Drain-Source Resistance	48 mOhms
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	2.7 W
Id - Continuous Drain Current	5 A
Tradename	STripFET
Configuration	Single
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	30 V
Transistor Polarity	P-Channel
Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	6 nC
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel

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Products specifications

Rds On - Drain-Source Resistance	48 mOhms
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	2.7 W
Id - Continuous Drain Current	5 A
Tradename	STripFET
Configuration	Single
Technology	Si
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	30 V
Transistor Polarity	P-Channel
Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	6 nC
Channel Mode	Enhancement
Maximum Operating Temperature	+ 150 C
Number of Channels	1 Channel