STS1DNC45

MOSFET N-Ch 450 Volt 0.4 A

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MOSFETs N-Ch 450 Volt 0.4 A
Lead Time: 91 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	450 V
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	4.1 Ohms
Pd - Power Dissipation	2 W
Number of Channels	2 Channel
Qg - Gate Charge	7 nC
Vgs - Gate-Source Voltage	30 V
Transistor Polarity	N-Channel
Technology	Si
Configuration	Dual
Minimum Operating Temperature	- 65 C
Tradename	SuperMESH
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	400 mA

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Products specifications

Vds - Drain-Source Breakdown Voltage	450 V
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	4.1 Ohms
Pd - Power Dissipation	2 W
Number of Channels	2 Channel
Qg - Gate Charge	7 nC
Vgs - Gate-Source Voltage	30 V
Transistor Polarity	N-Channel
Technology	Si
Configuration	Dual
Minimum Operating Temperature	- 65 C
Tradename	SuperMESH
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	400 mA