STS10P4LLF6

MOSFET P-channel 40 V, 0.0125 Ohm typ., 10 A STripFET F6 Power MOSFET in a SO-8 package

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MOSFETs P-channel 40 V, 0.0125 Ohm typ 10 A STripFET F6 Power MOSFET
Lead Time: 182 Days

Products specifications

Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	2.7 W
Rds On - Drain-Source Resistance	12.5 mOhms
Configuration	Single
Id - Continuous Drain Current	10 A
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	40 V
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	1 V
Technology	Si
Tradename	STripFET
Qg - Gate Charge	34 nC
Transistor Polarity	P-Channel

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Products specifications

Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	2.7 W
Rds On - Drain-Source Resistance	12.5 mOhms
Configuration	Single
Id - Continuous Drain Current	10 A
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	40 V
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	1 V
Technology	Si
Tradename	STripFET
Qg - Gate Charge	34 nC
Transistor Polarity	P-Channel