STQ2LN60K3-AP

MOSFET N-Ch 600V 4 Ohm 0.6A SuperMESH3 FET TO92

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MOSFETs N-Ch 600V 4 Ohm 0.6A SuperMESH3 FET TO92
Lead Time: 91 Days

Products specifications

Tradename	MDmesh
Technology	Si
Pd - Power Dissipation	2.5 W
Vgs - Gate-Source Voltage	30 V
Packaging	Ammo Pack
Rds On - Drain-Source Resistance	4.5 Ohms
Id - Continuous Drain Current	600 mA
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	4.5 V
Qg - Gate Charge	12 nC
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Mounting Style	Through Hole

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Products specifications

Tradename	MDmesh
Technology	Si
Pd - Power Dissipation	2.5 W
Vgs - Gate-Source Voltage	30 V
Packaging	Ammo Pack
Rds On - Drain-Source Resistance	4.5 Ohms
Id - Continuous Drain Current	600 mA
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	4.5 V
Qg - Gate Charge	12 nC
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Mounting Style	Through Hole