STQ1NK60ZR-AP

MOSFET N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package

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MOSFETs N-channel 600 V, 13 Ohm typ 0.3 A Zener-protected SuperMESH Power MOSFET in TO-9
Lead Time: 91 Days

Products specifications

Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	15 Ohms
Vgs - Gate-Source Voltage	10 V
Mounting Style	Through Hole
Qg - Gate Charge	4.9 nC
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Pd - Power Dissipation	3 W
Channel Mode	Enhancement
Id - Continuous Drain Current	300 mA
Technology	Si
Minimum Operating Temperature	- 55 C
Tradename	SuperMESH

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Products specifications

Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	15 Ohms
Vgs - Gate-Source Voltage	10 V
Mounting Style	Through Hole
Qg - Gate Charge	4.9 nC
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Pd - Power Dissipation	3 W
Channel Mode	Enhancement
Id - Continuous Drain Current	300 mA
Technology	Si
Minimum Operating Temperature	- 55 C
Tradename	SuperMESH