STQ1NC45R-AP

MOSFET POWER MOSFET

Availability: 999 in stock

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MOSFETs PTD HIGH VOLTAGE
Lead Time: 91 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	450 V
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	500 mA
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Minimum Operating Temperature	- 65 C
Mounting Style	Through Hole
Configuration	Single
Technology	Si
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	4.5 Ohms
Pd - Power Dissipation	3.1 W

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Products specifications

Vds - Drain-Source Breakdown Voltage	450 V
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	500 mA
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Minimum Operating Temperature	- 65 C
Mounting Style	Through Hole
Configuration	Single
Technology	Si
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	4.5 Ohms
Pd - Power Dissipation	3.1 W