STQ1HNK60R-AP

MOSFET POWER MOSFET

Availability: 610 in stock

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

1+

10+

100+

500+

1000+

2000+

4000+

Price

R 12.58

R 11.12

R 8.19

R 7.08

R 6.71

R 6.08

R 5.95

Free shipping

MOSFETs N-channel 600 V, 7.3 Ohm typ 1 A SuperMESH PowerMOSFET in TO-92 package
Lead Time: 91 Days

Products specifications

Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	30 V
Maximum Operating Temperature	+ 150 C
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Channel Mode	Enhancement
Id - Continuous Drain Current	400 mA
Rds On - Drain-Source Resistance	8.5 Ohms
Pd - Power Dissipation	30 W
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Mounting Style	Through Hole

Your name *

Your email *

Enquiry *

Products specifications

Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	30 V
Maximum Operating Temperature	+ 150 C
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Channel Mode	Enhancement
Id - Continuous Drain Current	400 mA
Rds On - Drain-Source Resistance	8.5 Ohms
Pd - Power Dissipation	30 W
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Mounting Style	Through Hole