STQ1HN60K3-AP

MOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET

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MOSFETs N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET
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Products specifications

Channel Mode	Enhancement
Id - Continuous Drain Current	400 mA
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	6.7 Ohms
Packaging	Ammo Pack
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si
Transistor Polarity	N-Channel
Configuration	Single
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	3.75 V
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	9.5 nC
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	3 W
Tradename	SuperMESH
Vgs - Gate-Source Voltage	30 V

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Products specifications

Channel Mode	Enhancement
Id - Continuous Drain Current	400 mA
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	6.7 Ohms
Packaging	Ammo Pack
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si
Transistor Polarity	N-Channel
Configuration	Single
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	3.75 V
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	9.5 nC
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	3 W
Tradename	SuperMESH
Vgs - Gate-Source Voltage	30 V