STP9N65M2

R 1.00

MOSFET N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220 package

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MOSFET N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220 package

Products specifications

Mounting Style	Through Hole
Transistor Polarity	N-Channel
Id - Continuous Drain Current	5 A
Rds On - Drain-Source Resistance	900 mOhms
Pd - Power Dissipation	60 W
Number of Channels	1 Channel
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	650 V
Minimum Operating Temperature	- 55 C
Tradename	MDmesh
Maximum Operating Temperature	+ 150 C
Technology	Si
Configuration	Single
Vgs - Gate-Source Voltage	25 V
Qg - Gate Charge	10 nC
Vgs th - Gate-Source Threshold Voltage	3 V

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Products specifications

Mounting Style	Through Hole
Transistor Polarity	N-Channel
Id - Continuous Drain Current	5 A
Rds On - Drain-Source Resistance	900 mOhms
Pd - Power Dissipation	60 W
Number of Channels	1 Channel
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	650 V
Minimum Operating Temperature	- 55 C
Tradename	MDmesh
Maximum Operating Temperature	+ 150 C
Technology	Si
Configuration	Single
Vgs - Gate-Source Voltage	25 V
Qg - Gate Charge	10 nC
Vgs th - Gate-Source Threshold Voltage	3 V