STP9N60M2

MOSFET N-CH 600V 0.72Ohm 5.5A MDMesh M2

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R 30.70

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R 13.71

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MOSFETs N-CH 600V 0.72Ohm 5.5A MDMesh M2
Lead Time: 112 Days

Products specifications

Technology	Si
Id - Continuous Drain Current	5.5 A
Rds On - Drain-Source Resistance	780 mOhms
Vgs th - Gate-Source Threshold Voltage	3 V
Tradename	MDmesh
Qg - Gate Charge	10 nC
Mounting Style	Through Hole
Number of Channels	1 Channel
Packaging	Tube
Transistor Polarity	N-Channel
Pd - Power Dissipation	60 W
Vgs - Gate-Source Voltage	25 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V

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Products specifications

Technology	Si
Id - Continuous Drain Current	5.5 A
Rds On - Drain-Source Resistance	780 mOhms
Vgs th - Gate-Source Threshold Voltage	3 V
Tradename	MDmesh
Qg - Gate Charge	10 nC
Mounting Style	Through Hole
Number of Channels	1 Channel
Packaging	Tube
Transistor Polarity	N-Channel
Pd - Power Dissipation	60 W
Vgs - Gate-Source Voltage	25 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V