MOSFET N-Ch 30 Volt 80 Amp
Products specifications
Technology | Si |
Channel Mode | Enhancement |
Pd - Power Dissipation | 300 W |
Packaging | Tube |
Vds - Drain-Source Breakdown Voltage | 30 V |
Configuration | Single |
Id - Continuous Drain Current | 80 A |
Rds On - Drain-Source Resistance | 4 mOhms |
Mounting Style | Through Hole |
Transistor Polarity | N-Channel |
Maximum Operating Temperature | + 175 C |
Number of Channels | 1 Channel |
Minimum Operating Temperature | - 65 C |
Vgs - Gate-Source Voltage | 20 V |