MOSFET N-Ch, 400V-0.85ohms 5.4A
Products specifications
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 30 V |
Number of Channels | 1 Channel |
Qg - Gate Charge | 19 nC |
Pd - Power Dissipation | 25 W |
Vgs th - Gate-Source Threshold Voltage | 3.75 V |
Configuration | Single |
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 400 V |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Id - Continuous Drain Current | 5.4 A |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 1 Ohms |
Packaging | Tube |
Technology | Si |