MOSFET N-Ch 800V .95Ohm 6A MDmesh K5
Products specifications
Transistor Polarity | N-Channel |
Technology | Si |
Id - Continuous Drain Current | 6 A |
Vds - Drain-Source Breakdown Voltage | 800 V |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Packaging | Tube |
Rds On - Drain-Source Resistance | 1.2 Ohms |
Tradename | MDmesh |
Mounting Style | Through Hole |
Qg - Gate Charge | 13.4 nC |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 30 V |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 110 W |