STP7N65M2

R 1.00

MOSFET N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a TO-220 package

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MOSFET N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a TO-220 package

Products specifications

Vgs th - Gate-Source Threshold Voltage	3 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	5 A
Pd - Power Dissipation	60 W
Rds On - Drain-Source Resistance	1.15 Ohms
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	25 V
Vds - Drain-Source Breakdown Voltage	650 V
Qg - Gate Charge	9 nC
Tradename	MDmesh
Packaging	Tube
Technology	Si

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Products specifications

Vgs th - Gate-Source Threshold Voltage	3 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	5 A
Pd - Power Dissipation	60 W
Rds On - Drain-Source Resistance	1.15 Ohms
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	25 V
Vds - Drain-Source Breakdown Voltage	650 V
Qg - Gate Charge	9 nC
Tradename	MDmesh
Packaging	Tube
Technology	Si