MOSFET N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFETs in TO-220 package
Products specifications
Mounting Style | Through Hole |
Tradename | SuperMESH |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 110 W |
Packaging | Tube |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Technology | Si |
Channel Mode | Enhancement |
Id - Continuous Drain Current | 4 A |
Configuration | Single |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 2 Ohms |
Vgs - Gate-Source Voltage | 30 V |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 1.05 kV |
Qg - Gate Charge | 17 nC |