STP6N80K5

R 1.00

MOSFET N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in TO-220 package

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MOSFET N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in TO-220 package

Products specifications

Vds - Drain-Source Breakdown Voltage	800 V
Tradename	MDmesh
Configuration	Single
Packaging	Tube
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	4.5 A
Technology	Si
Qg - Gate Charge	13 nC
Number of Channels	1 Channel
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	4 V
Rds On - Drain-Source Resistance	1.6 Ohms
Vgs - Gate-Source Voltage	30 V
Pd - Power Dissipation	85 W
Channel Mode	Enhancement
Transistor Polarity	N-Channel

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Products specifications

Vds - Drain-Source Breakdown Voltage	800 V
Tradename	MDmesh
Configuration	Single
Packaging	Tube
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	4.5 A
Technology	Si
Qg - Gate Charge	13 nC
Number of Channels	1 Channel
Mounting Style	Through Hole
Vgs th - Gate-Source Threshold Voltage	4 V
Rds On - Drain-Source Resistance	1.6 Ohms
Vgs - Gate-Source Voltage	30 V
Pd - Power Dissipation	85 W
Channel Mode	Enhancement
Transistor Polarity	N-Channel