STP6N65M2

R 1.00

MOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in TO-220 package

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MOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in TO-220 package

Products specifications

Packaging	Tube
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	650 V
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3 V
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	25 V
Pd - Power Dissipation	60 W
Mounting Style	Through Hole
Configuration	Single
Qg - Gate Charge	9.8 nC
Tradename	MDmesh
Id - Continuous Drain Current	4 A
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	1.35 Ohms
Transistor Polarity	N-Channel

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Products specifications

Packaging	Tube
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	650 V
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3 V
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	25 V
Pd - Power Dissipation	60 W
Mounting Style	Through Hole
Configuration	Single
Qg - Gate Charge	9.8 nC
Tradename	MDmesh
Id - Continuous Drain Current	4 A
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	1.35 Ohms
Transistor Polarity	N-Channel