Channel Mode | Enhancement |
Pd - Power Dissipation | 110 W |
Vgs - Gate-Source Voltage | 10 V |
Maximum Operating Temperature | + 175 C |
Configuration | Single |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Rds On - Drain-Source Resistance | 14 mOhms |
Transistor Polarity | N-Channel |
Minimum Operating Temperature | - 55 C |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Tradename | STripFET |
Id - Continuous Drain Current | 60 A |
Vds - Drain-Source Breakdown Voltage | 60 V |
Technology | Si |
Qg - Gate Charge | 54 nC |