MOSFET N-Ch Clamped 62 Amp
Products specifications
Rds On - Drain-Source Resistance | 15 mOhms |
Vds - Drain-Source Breakdown Voltage | 33 V |
Vgs - Gate-Source Voltage | 10 V |
Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 110 W |
Qg - Gate Charge | 34 nC |
Configuration | Single |
Id - Continuous Drain Current | 62 A |
Technology | Si |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Minimum Operating Temperature | - 55 C |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Mounting Style | Through Hole |
Tradename | MESH OVERLAY |