MOSFET N-Ch 60 Volt 60 Amp
Products specifications
Vds - Drain-Source Breakdown Voltage | 60 V |
Technology | Si |
Vgs - Gate-Source Voltage | 10 V |
Id - Continuous Drain Current | 60 A |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Configuration | Single |
Qg - Gate Charge | 35 nC |
Pd - Power Dissipation | 110 W |
Maximum Operating Temperature | + 175 C |
Rds On - Drain-Source Resistance | 14 mOhms |
Minimum Operating Temperature | - 65 C |
Channel Mode | Enhancement |