STP5N105K5

R 1.00

MOSFET N-channel 1050 V, 2.9 Ohm typ., 3 A MDmesh K5 Power MOSFETs in TO-220 package

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MOSFET N-channel 1050 V, 2.9 Ohm typ., 3 A MDmesh K5 Power MOSFETs in TO-220 package

Products specifications

Tradename	MDmesh
Rds On - Drain-Source Resistance	3.5 Ohms
Vgs - Gate-Source Voltage	30 V
Mounting Style	Through Hole
Id - Continuous Drain Current	3 A
Transistor Polarity	N-Channel
Packaging	Tube
Number of Channels	1 Channel
Technology	Si
Pd - Power Dissipation	85 W
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	1.05 kV
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	12.5 nC
Configuration	Single
Channel Mode	Enhancement

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Products specifications

Tradename	MDmesh
Rds On - Drain-Source Resistance	3.5 Ohms
Vgs - Gate-Source Voltage	30 V
Mounting Style	Through Hole
Id - Continuous Drain Current	3 A
Transistor Polarity	N-Channel
Packaging	Tube
Number of Channels	1 Channel
Technology	Si
Pd - Power Dissipation	85 W
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	1.05 kV
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	12.5 nC
Configuration	Single
Channel Mode	Enhancement