MOSFET N-Ch 60 Volt 55 Amp
Products specifications
Tradename | STripFET |
Vds - Drain-Source Breakdown Voltage | 60 V |
Technology | Si |
Channel Mode | Enhancement |
Pd - Power Dissipation | 30 W |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Rds On - Drain-Source Resistance | 15 mOhms |
Vgs - Gate-Source Voltage | 20 V |
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Qg - Gate Charge | 44.5 nC |
Configuration | Single |
Id - Continuous Drain Current | 50 A |
Mounting Style | Through Hole |
Maximum Operating Temperature | + 175 C |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |