MOSFET N-Ch 60 Volt 55 Amp
Products specifications
Pd - Power Dissipation | 110 W |
Qg - Gate Charge | 44.5 nC |
Packaging | Tube |
Vds - Drain-Source Breakdown Voltage | 60 V |
Rds On - Drain-Source Resistance | 18 mOhms |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Maximum Operating Temperature | + 175 C |
Channel Mode | Enhancement |
Minimum Operating Temperature | - 55 C |
Technology | Si |
Tradename | STripFET |
Vgs - Gate-Source Voltage | 10 V |
Id - Continuous Drain Current | 50 A |
Configuration | Single |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |