STP4N90K5

R 1.00

MOSFET N-channel 900 V, 1.90 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package

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MOSFET N-channel 900 V, 1.90 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package

Products specifications

Mounting Style	Through Hole
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	5.3 nC
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	1.9 Ohms
Technology	Si
Tradename	MDmesh
Configuration	Single
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	900 V
Id - Continuous Drain Current	3 A
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	60 W
Vgs - Gate-Source Voltage	30 V

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Products specifications

Mounting Style	Through Hole
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	5.3 nC
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	1.9 Ohms
Technology	Si
Tradename	MDmesh
Configuration	Single
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	900 V
Id - Continuous Drain Current	3 A
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	60 W
Vgs - Gate-Source Voltage	30 V