MOSFET N-CH 800V 2.1Ohm 3A Zener-protected
Products specifications
Rds On - Drain-Source Resistance | 2.1 Ohms |
Qg - Gate Charge | 10.5 nC |
Mounting Style | Through Hole |
Vds - Drain-Source Breakdown Voltage | 800 V |
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Tradename | MDmesh |
Technology | Si |
Id - Continuous Drain Current | 3 A |
Pd - Power Dissipation | 60 W |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 30 V |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Channel Mode | Enhancement |
Configuration | Single |