MOSFET N-Ch 525V 2.5A 2.1 Ohm SuperMESH3
Products specifications
Id - Continuous Drain Current | 2.5 A |
Qg - Gate Charge | 11 nC |
Pd - Power Dissipation | 20 W |
Rds On - Drain-Source Resistance | 2.1 Ohms |
Transistor Polarity | N-Channel |
Vgs th - Gate-Source Threshold Voltage | 3.75 V |
Vds - Drain-Source Breakdown Voltage | 525 V |
Mounting Style | Through Hole |
Packaging | Tube |
Technology | Si |
Vgs - Gate-Source Voltage | 30 V |
Configuration | Single |
Number of Channels | 1 Channel |
Tradename | MDmesh |