STP4LN80K5

R 1.00

MOSFET N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package

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MOSFET N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220 package

Products specifications

Rds On - Drain-Source Resistance	2.1 Ohms
Pd - Power Dissipation	60 W
Vgs - Gate-Source Voltage	30 V
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	800 V
Configuration	Single
Tradename	MDmesh
Channel Mode	Enhancement
Technology	Si
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Id - Continuous Drain Current	3 A
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	3.7 nC
Vgs th - Gate-Source Threshold Voltage	3 V

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Products specifications

Rds On - Drain-Source Resistance	2.1 Ohms
Pd - Power Dissipation	60 W
Vgs - Gate-Source Voltage	30 V
Packaging	Tube
Vds - Drain-Source Breakdown Voltage	800 V
Configuration	Single
Tradename	MDmesh
Channel Mode	Enhancement
Technology	Si
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Id - Continuous Drain Current	3 A
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	3.7 nC
Vgs th - Gate-Source Threshold Voltage	3 V