MOSFET N-Ch 300V 0.063Ohm 42A pwr MOSFET
Products specifications
Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 90 nC |
Packaging | Tube |
Number of Channels | 1 Channel |
Pd - Power Dissipation | 300 W |
Rds On - Drain-Source Resistance | 63 mOhms |
Vds - Drain-Source Breakdown Voltage | 300 V |
Id - Continuous Drain Current | 42 A |
Technology | Si |
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Qualification | AEC-Q101 |
Vgs - Gate-Source Voltage | 20 V |
Maximum Operating Temperature | + 175 C |
Configuration | Single |
Tradename | STripFET |