MOSFET Automotive-grade N-channel 600 V, 0.085 Ohm typ 34 A MDmesh DM2 Power MOSFET
Lead Time: 364 Days
Products specifications
Qg - Gate Charge | 56 nC |
Tradename | MDmesh |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Channel Mode | Enhancement |
Vgs - Gate-Source Voltage | 25 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 34 A |
Technology | Si |
Mounting Style | Through Hole |
Pd - Power Dissipation | 250 W |
Qualification | AEC-Q101 |
Transistor Polarity | N-Channel |
Rds On - Drain-Source Resistance | 93 mOhms |
Vds - Drain-Source Breakdown Voltage | 650 V |