STP43N60DM2

R 1.00

MOSFET N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220 package

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MOSFET N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220 package

Products specifications

Configuration	Single
Rds On - Drain-Source Resistance	93 mOhms
Pd - Power Dissipation	250 W
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	650 V
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	25 V
Qg - Gate Charge	56 nC
Technology	Si
Mounting Style	Through Hole
Id - Continuous Drain Current	34 A
Tradename	MDmesh
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Configuration	Single
Rds On - Drain-Source Resistance	93 mOhms
Pd - Power Dissipation	250 W
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	650 V
Vgs th - Gate-Source Threshold Voltage	3 V
Vgs - Gate-Source Voltage	25 V
Qg - Gate Charge	56 nC
Technology	Si
Mounting Style	Through Hole
Id - Continuous Drain Current	34 A
Tradename	MDmesh
Transistor Polarity	N-Channel
Number of Channels	1 Channel