STP42N60M2-EP

R 1.00

MOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-220 package

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MOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-220 package

Products specifications

Vgs - Gate-Source Voltage	25 V
Vds - Drain-Source Breakdown Voltage	600 V
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	87 mOhms
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Pd - Power Dissipation	250 W
Qg - Gate Charge	55 nC
Id - Continuous Drain Current	34 A
Tradename	MDmesh
Configuration	Single
Technology	Si
Vgs th - Gate-Source Threshold Voltage	2 V
Mounting Style	Through Hole

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Products specifications

Vgs - Gate-Source Voltage	25 V
Vds - Drain-Source Breakdown Voltage	600 V
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	87 mOhms
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Pd - Power Dissipation	250 W
Qg - Gate Charge	55 nC
Id - Continuous Drain Current	34 A
Tradename	MDmesh
Configuration	Single
Technology	Si
Vgs th - Gate-Source Threshold Voltage	2 V
Mounting Style	Through Hole