STP40NF10L

MOSFET N-Ch 100 Volt 40 Amp

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R 36.62

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R 31.51

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MOSFETs N-Ch 100 Volt 40 Amp
Lead Time: 182 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	100 V
Mounting Style	Through Hole
Configuration	Single
Id - Continuous Drain Current	40 A
Rds On - Drain-Source Resistance	33 mOhms
Transistor Polarity	N-Channel
Qg - Gate Charge	46 nC
Pd - Power Dissipation	150 W
Technology	Si
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	10 V
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	1 V
Maximum Operating Temperature	+ 175 C
Tradename	STripFET

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Products specifications

Vds - Drain-Source Breakdown Voltage	100 V
Mounting Style	Through Hole
Configuration	Single
Id - Continuous Drain Current	40 A
Rds On - Drain-Source Resistance	33 mOhms
Transistor Polarity	N-Channel
Qg - Gate Charge	46 nC
Pd - Power Dissipation	150 W
Technology	Si
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	10 V
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	1 V
Maximum Operating Temperature	+ 175 C
Tradename	STripFET