STP40N60M2

MOSFET N-CH 600V 0.078Ohm typ. 34A MDmesh M2

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R 65.17

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MOSFETs N-CH 600V 0.078Ohm typ. 34A MDmesh M2

Products specifications

Vgs th - Gate-Source Threshold Voltage	3 V
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	88 mOhms
Qg - Gate Charge	57 nC
Mounting Style	Through Hole
Number of Channels	1 Channel
Technology	Si
Transistor Polarity	N-Channel
Id - Continuous Drain Current	34 A
Packaging	Tube
Minimum Operating Temperature	- 55 C
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V
Pd - Power Dissipation	250 W
Vgs - Gate-Source Voltage	25 V

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Products specifications

Vgs th - Gate-Source Threshold Voltage	3 V
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	88 mOhms
Qg - Gate Charge	57 nC
Mounting Style	Through Hole
Number of Channels	1 Channel
Technology	Si
Transistor Polarity	N-Channel
Id - Continuous Drain Current	34 A
Packaging	Tube
Minimum Operating Temperature	- 55 C
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V
Pd - Power Dissipation	250 W
Vgs - Gate-Source Voltage	25 V