MOSFETs N-channel 900 V, 4.1 Ohm typ 3 A SuperMESH Power MOSFET
Lead Time: 98 Days
Products specifications
Rds On - Drain-Source Resistance | 4.8 Ohms |
Configuration | Single |
Transistor Polarity | N-Channel |
Mounting Style | Through Hole |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 900 V |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Vgs - Gate-Source Voltage | 30 V |
Pd - Power Dissipation | 25 W |
Packaging | Tube |
Id - Continuous Drain Current | 3 A |
Tradename | SuperMESH |
Technology | Si |