MOSFETs N-channel 500 V, 2.8 Ohm typ 2.3 A SuperMESH Power MOSFET
Lead Time: 0 Days
Products specifications
Vds - Drain-Source Breakdown Voltage | 500 V |
Mounting Style | Through Hole |
Rds On - Drain-Source Resistance | 2.8 Ohms |
Qg - Gate Charge | 15 nC |
Tradename | SuperMESH |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Pd - Power Dissipation | 45 W |
Technology | Si |
Vgs - Gate-Source Voltage | 30 V |
Channel Mode | Enhancement |
Configuration | Single |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Packaging | Tube |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Id - Continuous Drain Current | 2.3 A |