STP3N80K5

MOSFET N-CH 800V 2.8Ohm typ 2.5A Zener-protected

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R 33.39

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MOSFETs N-CH 800V 2.8Ohm typ 2.5A Zener-protecte
Lead Time: 98 Days

Products specifications

Pd - Power Dissipation	60 W
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	4 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Id - Continuous Drain Current	2.5 A
Rds On - Drain-Source Resistance	2.8 Ohms
Tradename	MDmesh
Vgs - Gate-Source Voltage	30 V
Qg - Gate Charge	9.5 nC
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	800 V
Technology	Si
Packaging	Tube
Mounting Style	Through Hole

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Products specifications

Pd - Power Dissipation	60 W
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	4 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Id - Continuous Drain Current	2.5 A
Rds On - Drain-Source Resistance	2.8 Ohms
Tradename	MDmesh
Vgs - Gate-Source Voltage	30 V
Qg - Gate Charge	9.5 nC
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	800 V
Technology	Si
Packaging	Tube
Mounting Style	Through Hole