MOSFETs N-channel 800 V, 2.75 Ohm typ 2 A MDmesh K5 Power MOSFET
Lead Time: 98 Days
Products specifications
Mounting Style | Through Hole |
Id - Continuous Drain Current | 2 A |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 800 V |
Qg - Gate Charge | 2.63 nC |
Packaging | Tube |
Tradename | MDmesh |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Vgs - Gate-Source Voltage | 30 V |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Rds On - Drain-Source Resistance | 2.75 Ohms |
Configuration | Single |
Pd - Power Dissipation | 45 W |