STP36N60M6

MOSFET N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh M6 Power MOSFET in a TO-220 package

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MOSFETs N-channel 600 V, 85 mOhm typ 30 A MDmesh M6 Power MOSFET

Products specifications

Pd - Power Dissipation	208 W
Channel Mode	Enhancement
Technology	Si
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	30 A
Qg - Gate Charge	44.3 nC
Vgs th - Gate-Source Threshold Voltage	3.25 V
Tradename	MDmesh
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	85 mOhms
Vgs - Gate-Source Voltage	25 V

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Products specifications

Pd - Power Dissipation	208 W
Channel Mode	Enhancement
Technology	Si
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	30 A
Qg - Gate Charge	44.3 nC
Vgs th - Gate-Source Threshold Voltage	3.25 V
Tradename	MDmesh
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	85 mOhms
Vgs - Gate-Source Voltage	25 V