STP35N60DM2

MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-220 package

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MOSFETs N-channel 600 V, 0.094 Ohm typ 28 A MDmesh DM2 Power MOSFETs in TO-220 package

Products specifications

Number of Channels	1 Channel
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	110 mOhms
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Tradename	MDmesh
Configuration	Single
Pd - Power Dissipation	210 W
Vgs - Gate-Source Voltage	25 V
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	600 V
Qg - Gate Charge	54 nC
Id - Continuous Drain Current	28 A
Technology	Si

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Products specifications

Number of Channels	1 Channel
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	110 mOhms
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Mounting Style	Through Hole
Transistor Polarity	N-Channel
Tradename	MDmesh
Configuration	Single
Pd - Power Dissipation	210 W
Vgs - Gate-Source Voltage	25 V
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	600 V
Qg - Gate Charge	54 nC
Id - Continuous Drain Current	28 A
Technology	Si