MOSFETs N-Ch 600V 0.097 Ohm 29A Fdmesh II FD
Lead Time: 112 Days
Products specifications
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 190 W |
Vgs - Gate-Source Voltage | 25 V |
Rds On - Drain-Source Resistance | 110 mOhms |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Mounting Style | Through Hole |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - Continuous Drain Current | 29 A |
Number of Channels | 1 Channel |
Configuration | Single |
Channel Mode | Enhancement |
Packaging | Tube |
Technology | Si |
Qg - Gate Charge | 80.4 nC |